| Autor: |
Lazarenko, P. I., Sherchenkov, A. A., Kozyukhin, S. A., Babich, A. V., Timoshenkov, S. P., Gromov, D. G., Shuliatyev, A. S., Redichev, E. N. |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 2016, Vol. 1727 Issue 1, p020013-1-020013-6, 6p, 1 Chart, 3 Graphs |
| Abstrakt: |
In this study I-V characteristic, temperature dependence of resistivity, thermopower, switching and memory effect were investigated for GST225 thin films. Resistivities, ratio of the resistivities of amorphous and crystalline states, activation energies of conductivity, temperature of phase transition, Seebeck coefficient, transition time due to the transformation from OFF to ON states and full recording time were estimated. It was shown that transport mechanism based on the two-channel model has a good correlation with experimental results for Ohmic region of I-V characteristic, while space-charge limited current mechanism for power region. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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