Autor: |
Nosaeva, Ksenia, Al-Sawaf, Thualfiqar, John, Wilfred, Stoppel, Dimitri, Rudolph, Matthias, Schmuckle, Franz-Josef, Janke, Bernd, Kruger, Olaf, Krozer, Viktor, Heinrich, Wolfgang, Weimann, Nils G. |
Předmět: |
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Zdroj: |
IEEE Transactions on Electron Devices; May2016, Vol. 63 Issue 5, p1846-1852, 7p |
Abstrakt: |
The RF power output of scaled subterahertz and terahertz indium phosphide double-heterostructure bipolar transistors (InP DHBTs) is limited by the thermal device resistance, which increases with the geometrical frequency scaling of these devices. We present a diamond thin-film heat sink process aimed at the efficient removal of the heat generated in submicrometer InP HBTs. The thin-film diamond is integrated in a wafer bond process. Vertical connections are facilitated by plasma-processed contact holes through the diamond layer, metallized with electroplated gold. The process is suitable for monolithic circuit integration, amenable to the realization of high-power analog circuits in the millimeter-wave region and beyond. The thermal resistance of double-finger transistors with a 0.8- \mu \textm emitter width could be reduced to 0.7 K/mW, while reaching the gain cutoff frequencies of fT=360 GHz and f\mathrm {max}=350 GHz. An integrated two-stage power amplifier with four-way power combining fabricated in this technology exhibited 20-dBm power output at 90 GHz with a bandwidth of 10 GHz. [ABSTRACT FROM AUTHOR] |
Databáze: |
Complementary Index |
Externí odkaz: |
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