| Autor: |
Melo, M., Araujo, E.B., Turygin, A.P., Shur, V.Ya., Kholkin, A.L. |
| Předmět: |
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| Zdroj: |
Ferroelectrics; 2016, Vol. 496 Issue 1, p177-186, 10p |
| Abstrakt: |
Randomly oriented Sr0.75Ba0.25Nb2O6thin films have been deposited on Pt(111)/Ti/SiO2/Si substrates using a polymeric chemical method to study their physical properties. Refinements of the structure confirm the stoichiometry of the studied films. The relaxor behavior is evidenced by the dielectric measurements and Vögel-Fulcher analysis of the dielectric curves. Lowering the transition temperature (Tm) by about 100 K and asymmetries in the local hysteresis loops well above Tmare discussed in terms of the existence of complex defects in thin films. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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