| Autor: |
Hsiung Chou, Kung-Shang Yang, Yao-Chung Tsao, Dwivedi, G. D., Cheng-Pang Lin, Shih-Jye Sun, Lin, L. K., Lee, S. F. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 4/4/2016, Vol. 108 Issue 14, p142404-1-142404-5, 5p, 3 Graphs |
| Abstrakt: |
Spin polarized current (SPC) is a crucial characteristic of diluted magnetic oxides due to the potential application of oxides in spintronic devices. However, most research has been focused on ferromagnetic properties rather than polarization of electric current, because direct measurements are difficult and the origin of SPC has yet to be fully understood. The method to increase the SPC percentage is beyond practical consideration at present. To address this problem, we focus on the role of oxygen vacancies (VO) on SPC, which are controlled by growing the Co-doped ZnO thin-films at room temperature in a reducing atmosphere [Ar+(1%–30%)H2]. We found that the conductivity increases with an increase of VO via two independent channels: the variable range hopping (VRH) within localized states and the itinerant transport in the conduction band. The point contact Andreev reflection measurements at 4.2 K, where the electric conduction is governed only by the VRH mechanism, prove that the current flowing in the VRH hopping channel is SPC. The percentage of SPC increases with the introduction of VO and increase in its concentration. The transport measurement shows that by manipulating VO, one can control the percentage of VRH hopping conduction such that it can even dominate room temperature conduction. The highest achieved SPC ratio at room temperature was 80%. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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