| Autor: |
Yacoub, H., Fahle, D., Eickelkamp, M., Wille, A., Mauder, C., Heuken, M., Kalisch, H., Vescan, A. |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics; 2016, Vol. 119 Issue 13, p135704-1-135704-6, 6p, 1 Diagram, 14 Graphs |
| Abstrakt: |
Back-gated measurements on conductive silicon substrates have been performed to investigate the effect of stress voltage on the dynamic behaviour of GaN-on-silicon (GaN-on-Si) transistors. Two comparable samples were studied with the only difference being the vertical dislocation density. Results show a clear correlation between dislocation density and the ability of the GaN buffer to dynamically discharge under high stress conditions. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
