| Autor: |
Roodenko, K., Liao, P.-K., Lan, D., Clark, K. P., Fraser, E. D., Vargason, K. W., Kuo, J.-M., Kao, Y.-C., Pinsukanjana, P. R. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2016, Vol. 119 Issue 13, p135701-1-135701-5, 5p, 1 Chart, 6 Graphs |
| Abstrakt: |
Control over the Te doping concentration is especially challenging in the mass-production of optically transparent, high-resistivity Te-doped GaSb crystals. Driven by the necessity to perform fast, robust, and non-destructive quality control of the Te doping homogeneity of the optically transparent large-diameter GaSb wafers, we correlated electronic and optical infrared properties of Tedoped GaSb crystals. The study was based on the experimental Hall and Fourier-Transform Infrared (FTIR) data collected from over 50 samples of the low-doped n-type material (carrier concentration of 6 × 1016 cm-3 to 7 × 1017 cm-3) and the Te-doped p-type GaSb (4.6 × 1015 cm-3 to 1 × 1016 cm-3). For the n-type GaSb, the analysis of the FTIR data was performed using free carrier absorption model, while for the p-type material, the absorption was modeled using intervalence band absorption mechanism. Using the correlation between the Hall and the IR data, FTIR maps across the wafers allow a fast and reliable way to estimate carrier concentration profile within the wafer. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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