High-frequency, scaled MoS2 transistors.
Autor: | Krasnozhon, Dana, Dutta, Subhojit, Nyffeler, Clemens, Leblebici, Yusuf, Kis, Andras |
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Zdroj: | 2015 IEEE International Electron Devices Meeting (IEDM); 1/1/2015, p1.4-27.4.4, 0p |
Databáze: | Complementary Index |
Externí odkaz: |