High-frequency, scaled MoS2 transistors.

Autor: Krasnozhon, Dana, Dutta, Subhojit, Nyffeler, Clemens, Leblebici, Yusuf, Kis, Andras
Zdroj: 2015 IEEE International Electron Devices Meeting (IEDM); 1/1/2015, p1.4-27.4.4, 0p
Databáze: Complementary Index