| Autor: |
Jae Hyo Park, Hyung Yoon Kim, Ki Hwan Seok, Zohreh Kiaee, Sol Kyu Lee, Seung Ki Joo |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 3/28/2016, Vol. 119 Issue 12, p124108-1-124108-8, 8p, 4 Diagrams, 4 Graphs |
| Abstrakt: |
Being able to control grain boundaries during the phase transformation when processing a ferroelectric thin-film is crucial for the successful development of practical multibit ferroelectric memory. A novel development of ferroelectric thin-film crystallization processing for realizing epitaxial-like single crystals via artificial nucleation by Pt-seeding is reported here. Dividing the nucleation and growth mechanism by Pt-seeding, it is possible to obtain large and uniform rectangular-shaped ferroelectric grains, large enough to fabricate a field-effect transistor (FET) in the inside of the crystal grain. The fabricated ferroelectric FET, Pt/Pb(Zr,Ti)O3/ZrTiO4/Si, showed a large memory window (~2.2V), a low operation voltage (~6V), and an ultra-fast program/erase speed (~10-6 s). Moreover, there was no degradation after 1015 cycles of bipolar fatigue testing and the sample even showed a long retention time after 1 yr. All of these characteristics correspond to the best performance among all types of ferroelectric field-effect transistors reported thus far. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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