| Autor: |
Lee, Changhyun, Bae, Kang, Ha, Jaeyoung, Kim, Hwamin, Sohn, Sunyoung, Seo, Sungbo |
| Předmět: |
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| Zdroj: |
Molecular Crystals & Liquid Crystals; 2016, Vol. 626 Issue 1, p246-253, 8p |
| Abstrakt: |
The (In2O3)77.34(ZnO)x(SnO2)22.66-x(denote to IZTO-2) films with x = 13, 15, 17, 19 wt.% were prepared on PET film with a 100-nm-thick SiO2buffer layer by using RF-magnetron sputtering method, and their electrical stabilities were tested under various external stresses such as moist heat, temperature fluctuations and bending of substrate films. The lowest resistivity of 4.8 × 10−4Ω•cm was observed in the IZTO-2 film of x = 17 wt.% which also had such good properties as high electrical stability, surface uniformity, and high conductivity as compared with those of another (In2O3)90(ZnO)7(SnO2)3(IZTO-1) film. These results suggest that the optimum starting composition for IZTO film with high quality as a flexible transparent conducting oxide(TCO) film is In2O3: ZnO : SnO2= 77.34 : 17 : 5.66 wt.%. The electrical stability of the optimum IZTO-2 film was greatly improved because the SiO2buffer layer introduced between IZTO thin film and PET substrate acted as a blocking barrier to water vapour and organic solvents diffusing from the PET film and also as a buffer layer withstanding the bending damage. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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