| Autor: |
Cortes-Mestizo, Irving Eduardo, Espinosa-Vega, Leticia Ithsmel, Espinoza-Figueroa, Jose Angel, Cisneros-de-la-Rosa, Alejandro, Eugenio-Lopez, Eric, Mendez-Garcia, Victor Hugo, Briones, Edgar, Briones, Joel, Zamora-Peredo, Luis, Droopad, Ravindranath, Yee-Rendon, Cristo |
| Předmět: |
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| Zdroj: |
Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics; Mar/Apr2016, Vol. 34 Issue 2, p1-7, 7p |
| Abstrakt: |
In this work, the influence of the surface depletion layer on the formation of a two-dimensional electron gas in AlGaAs/GaAs modulated dopedheterostructures is studied. The authors explore a method for estimating the depletion region inside of the GaAs-based heterostructures by using the longitudinal optical and L- amplitude modes observed in Raman spectra, which are supported by the modeling results. The authors found that the position of the topmost doping layer changes the electron distribution in the heterostructure and decreases the influence of the depletion layer. Similar effects are perceived when an optimized solution of (NH4)2SX and isopropanol is employed. The authors present a method to evaluate the formation of a double two-dimensional electron gas in a heterostructure by the adequate use of modulation line in the photoreflectance spectroscopy. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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