| Autor: |
Armstrong, Andrew M., Crawford, Mary H., Jayawardena, Asanka, Ahyi, Ayayi, Dhar, Sarit |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2016, Vol. 119 Issue 10, p1-6, 6p, 6 Graphs |
| Abstrakt: |
Solar-blind photodetection and photoconductive gain >50 corresponding to a responsivity >8 A/W were observed for β-Ga2O3 Schottky photodiodes. The origin of photoconductive gain was investigated. Current-voltage characteristics of the diodes did not indicate avalanche breakdown, which excludes carrier multiplication by impact ionization as the source for gain. However, photocapacitance measurements indicated a mechanism for hole localization for above-band gap illumination, suggesting self-trapped hole formation. Comparison of photoconductivity and photocapacitance spectra indicated that self-trapped hole formation coincides with the strong photoconductive gain. It is concluded that self-trapped hole formation near the Schottky diode lowers the effective Schottky barrier in reverse bias, producing photoconductive gain. Ascribing photoconductive gain to an inherent property like self-trapping of holes can explain the operation of a variety of β-Ga2O3 photodetectors. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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