| Autor: |
Siddiqua, Poppy, O'Leary, Stephen K. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 3/7/2016, Vol. 119 Issue 9, p095104-1-095104-10, 10p, 2 Charts, 5 Graphs |
| Abstrakt: |
Within the framework of a semi-classical three-valley Monte Carlo electron transport simulation approach, we analyze the steady-state and transient aspects of the electron transport within bulk zinc-blende indium nitride, with a focus on the response to variations in the crystal temperature and the doping concentration. We find that while the electron transport associated with zinc-blende InN is highly sensitive to the crystal temperature, it is not very sensitive to the doping concentration selection. The device consequences of these results are then explored. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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