| Autor: |
Liang, Qingqing, Cressler, John D., Niu, Guofu, Lu, Yuan, Freeman, Greg, Ahlgren, David C., Malladi, Ramana N., Newton, Kim, Harame, David L. |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Microwave Theory & Techniques; Nov2003, Vol. 51 Issue 11, p2165-2174, 10p, 6 Black and White Photographs, 4 Diagrams, 17 Graphs |
| Abstrakt: |
A new four-port scattering parameter (S-parameter) and broad-band noise deembedding methodology is presented. This deembedding technique considers distributed on-wafer parasitics in the millimeter-wave band (f > 30 GHz). The procedure is based on simple analytical calculations and requires no equivalent circuit modeling or electromagnetic simulations. Detailed four-port system analysis and deembedding expressions are derived. Comparisons between this new method and the industry-standard "open-short" method were made using measured and simulated data on state-of-the-art SiGe HBTs with a maximum cutoff frequency of approximately 180 GHz. The comparison demonstrates that better accuracy is achieved using this new four-port method. Based on a combination of measurements and HP-ADS simulations, we also show that this new technique can be used to accurately extract the S-parameters and broad-band noise characteristics to frequencies above 100 GHz. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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