Solid state quantum computer development in silicon with single ion implantation.

Autor: Schenkel, T., Persaud, A., Park, S. J., Nilsson, J., Bokor, J., Liddle, J. A., Keller, R., Schneider, D. H., Cheng, D. W., Humphries, D. E.
Předmět:
Zdroj: Journal of Applied Physics; 12/1/2003, Vol. 94 Issue 11, p7017, 8p, 2 Black and White Photographs, 1 Diagram, 6 Graphs
Abstrakt: Spawned by the finding of efficient quantum algorithms, the development of a scalable quantum computer has emerged as a premiere challenge for nanoscience and nanotechnology in the last years. Spins of electrons and nuclei in [sup 31]P atoms embedded in silicon are promising quantum bit (qubit) candidates. In this article we describe single atom doping strategies and the status of our development of single atom qubit arrays integrated with control gates and readout structures in a “top down” approach. We discuss requirements for [sup 31]P qubit array formation by single ion implantation, and integration with semiconductor processing. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index