| Autor: |
Kusz, B., Pliszka, D., Gazda, M., Brusa, R.S., Trzebiatowski, K., Karwasz, G.P., Zecca, A., Murawski, L. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 12/1/2003, Vol. 94 Issue 11, p7270, 6p, 1 Black and White Photograph, 1 Diagram, 4 Graphs |
| Abstrakt: |
The layer of bismuth nanoclusters embedded in glass matrices and the surface layer of bismuth grains have been obtained by thermal treatment in hydrogen atmosphere of Bi[sub 0.33]Ge[sub 0.67]O[sub 1.84] and Bi[sub 0.57]Si[sub 0.43]O[sub 1.72] glass. The thickness and structure of such layers strongly depend on temperature and time of reduction. The structural studies of bismuth nanocrystals embedded in SiO[sub 2] or GeO[sub 2] matrices were performed with optical microscopy and atomic force microscopy. By the use of a slow-positron beam we monitored the structural changes undergoing in near-to-surface layers after the first steps of isothermal annealing. A simple two-layer model of reduced glasses explains the evolution of the surface layer and electrical properties of the material during the reduction process. © 2003 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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