| Autor: |
Nobuhiko Ozaki, Childs, David T. D., Sarma, Jayanta, Roberts, Timothy S., Takuma Yasuda, Hiroshi Shibata, Hirotaka Ohsato, Eiichiro Watanabe, Naoki Ikeda, Yoshimasa Sugimoto, Hogg, Richard A. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2016, Vol. 119 Issue 8, p083107-1-083107-7, 7p, 3 Diagrams, 5 Graphs |
| Abstrakt: |
We report a broadband-gain superluminescent diode (SLD) based on self-assembled InAs quantum dots (QDs) for application in a high-resolution optical coherence tomography (OCT) light source. Four InAs QD layers, with sequentially shifted emission wavelengths achieved by varying the thickness of the In0.2Ga0.8As strain-reducing capping layers, were embedded in a conventional p-n heterojunction comprising GaAs and AlGaAs layers. A ridge-type waveguide with segmented contacts was formed on the grown wafer, and an as-cleaved 4-mm-long chip (QD-SLD) was prepared. The segmented contacts were effective in applying a high injection current density to the QDs and obtaining emission from excited states of the QDs, resulting in an extension of the bandwidth of the electroluminescence spectrum. In addition, gain spectra deduced with the segmented contacts indicated a broadband smooth positive gain region spanning 160 nm. Furthermore, OCT imaging with the fabricated QD-SLD was performed, and OCT images with an axial resolution of ∼4 μm in air were obtained. These results demonstrate the effectiveness of the QD-SLD with segmented contacts as a highresolution OCT light source. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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