| Autor: |
Tingkai Li, Sheng Teng, Gennady, Ulrich, Bruce D., Evans, David R. |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Electron Devices; Nov2003, Vol. 50 Issue 11, p2280-2285, 6p |
| Abstrakt: |
The thermal stability of one-transistor ferroelectric nonvolatile memory devices with gate stack of Pt-Pb[SUB5] Ge[SUB3]O[SUB11]-Ir-Poly-SiO[SUB2]-Si was characterized in the temperature range of -10 °C to 150 °C. The memory windows decrease when the temperatures are higher than 60 °C. The drain currents (I[SUBD]) after programming to on state decrease with increasing temperature. The drain currents(I[SUBD]) after programming to off state increase with increasing the temperature. The ratio of drain current (I[SUBD]) at on state to that at off state drops from 7.5 orders of magnitude to 3.5 orders of magnitude when the temperature increases from room temperature to 150 °C. On the other hand, the memory window and the ratio of I[SUBD](on)/I[SUBD](Off) of the one-transistor memory device are practically no change when the temperature is reduced from room temperature to--10 °C. One-transistor (1T) memory devices also show excellent thermal imprint properties. Retention properties of 1T memory devices degrade with increasing temperature over 60 °C. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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