| Autor: |
Zhongyuan Ma, Wen Wang, Huafeng Yang, Xiaofan Jiang, Jie Yu, Hua Qin, Ling Xu, Kunji Chen, Xinfan Huang, Wei Li, Jun Xu, Duan Feng |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2/21/2016, Vol. 119 Issue 7, p075702-1-075702-6, 6p, 3 Diagrams, 5 Graphs |
| Abstrakt: |
The down-scaling of nanocrystal Si (nc-Si) floating gate memory must overcome the challenge of leakage current induced by the conventional ultra-thin tunnel layer. We demonstrate that an improved memory performance based on the Al/SiNx/nc-Si/Al2O3/Si structure can be achieved by adopting the Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition. A larger memory window of 7.9V and better retention characteristics of 4.7V after 105 s can be obtained compared with the devices containing a conventional SiO2 tunnel layer of equivalent thickness. The capacitance-voltage characteristic reveals that the Al2O3 tunnel layer has a smaller electron barrier height, which ensures that more electrons are injected into the nc-Si dots through the Al2O3/Si interface. The analysis of the conductance-voltage and high-resolution cross-section transmission microscopy reveals that the smaller nc-Si dots dominate in the charge injection in the nc-Si floating gate MOS device with an Al2O3 tunnel layer. With an increase of the nc-Si size, both nc-Si and the interface contribute to the charge storage capacity and retention. The introduction of the Al2O3 tunnel layer in nc-Si floating gate memory provides a method to achieve an improved performance of nc-Si floating gate memory. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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