| Autor: |
Greenaway, Ann L., Ritenour, Andrew J., Boettcher, Shannon W., Davis, Allison L., Boucher, Jason W., Aloni, Shaul |
| Zdroj: |
Journal of Materials Chemistry A; 2/28/2016, Vol. 4 Issue 8, p2909-2918, 10p |
| Abstrakt: |
We report the heteroepitaxial growth of variable composition n-GaAs1−xPx directly on GaAs substrates via close-spaced vapor transport using mixed GaAs–GaP powder sources. GaAs1−xPx films showed an average 10% reduction in atomic concentration of phosphorous from the source material, and ten GaAs0.7P0.3 films were grown with reproducible composition from a single source pellet. Non-aqueous photoelectrochemical measurements were used to assess electronic quality, with the best short-circuit photocurrent of 6.7 mA cm−2 and open-circuit photovoltage of 0.915 V for n-GaAs0.7P0.3 with a carrier concentration of 2 × 1017 cm−3. The best Hall electron mobility for this composition was 1570 cm2 V−1 s−1. Cross-sectional transmission electron microscopy of GaAs0.7P0.3 shows single-crystal structure with few defects. We conclude that CSVT is a promising route to the growth of ternary III–V materials like GaAs1−xPx for low-cost high-efficiency tandem photoelectrochemical or photovoltaic devices. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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