| Autor: |
Syuhada, Ibnu, Rosikhin, Ahmad, Fikri, Aulia, Noor, Fatimah A., Winata, Toto |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 2016, Vol. 1710 Issue 1, p1-10, 10p, 2 Diagrams, 1 Chart, 8 Graphs |
| Abstrakt: |
In this study, atomic simulation for graphene growth on Ni (100) at initial stage via chemical vapor deposition method has been developed. The C-C atoms interaction was performed by Terasoff potential mean while Ni-Ni interaction was specified by EAM (Embedded Atom Modified). On the other hand, we used very simple interatomic potential to describe Ni-C interaction during deposition process. From this simulation, it shows that the formation of graphene is not occurs through a combined deposition mechanism on Ni substrate but via C segregation. It means, Ni-C amorphous is source for graphene growth when cooling down of Ni substrate. This result is appropriate with experiments, tight binding and quantum mechanics simulation. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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