Experimental performance comparison of six-pack SiC MOSFET and Si IGBT modules paralleled in a half-bridge configuration for high temperature applications.

Autor: Lund, R., Tiwari, S., Midtgard, O.-M., Undeland, T. M.
Zdroj: 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices & Applications (WiPDA); 2015, p135-140, 6p
Databáze: Complementary Index