Experimental performance comparison of six-pack SiC MOSFET and Si IGBT modules paralleled in a half-bridge configuration for high temperature applications.
Autor: | Lund, R., Tiwari, S., Midtgard, O.-M., Undeland, T. M. |
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Zdroj: | 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices & Applications (WiPDA); 2015, p135-140, 6p |
Databáze: | Complementary Index |
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