Capacitance-voltage (C-V) characterization in very thin suspended silicon nanowires for NEMS-CMOS integration in 160nm Silicon-on-Insulator (SOI).
| Autor: | Yang, Rui, Tupta, Mary Anne, Marcoux, Carine, Andreucci, Philippe, Duraffourg, Laurent, Feng, Philip X.-L. |
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| Zdroj: | 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO); 2015, p1175-1178, 4p |
| Databáze: | Complementary Index |
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