| Autor: |
Jun Luo, Sheng-Lei Zhao, Min-Han Mi, Jin-Cheng Zhang, Xiao-Hua Ma, Yue Hao, Wei-Wei Chen, Bin Hou |
| Předmět: |
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| Zdroj: |
Chinese Physics B; Feb2016, Vol. 25 Issue 2, p1-1, 1p |
| Abstrakt: |
The effects of gate length LG on breakdown voltage VBR are investigated in AlGaN/GaN high-electron-mobility transistors (HEMTs) with LG = 1 μm∼ 20 μm. With the increase of LG, VBR is first increased, and then saturated at LG = 3 μm. For the HEMT with LG = 1 μm, breakdown voltage VBR is 117 V, and it can be enhanced to 148 V for the HEMT with LG = 3 μm. The gate length of 3 μm can alleviate the buffer-leakage-induced impact ionization compared with the gate length of 1 μm, and the suppression of the impact ionization is the reason for improving the breakdown voltage. A similar suppression of the impact ionization exists in the HEMTs with LG > 3 μm. As a result, there is no obvious difference in breakdown voltage among the HEMTs with LG = 3 μm∼20 μm, and their breakdown voltages are in a range of 140 V–156 V. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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