| Autor: |
Patrick Hofmann, Christian Röder, Frank Habel, Gunnar Leibiger, Franziska C Beyer, Günter Gärtner, Stefan Eichler, Thomas Mikolajick |
| Předmět: |
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| Zdroj: |
Journal of Physics D: Applied Physics; 2/25/2016, Vol. 49 Issue 7, p1-1, 1p |
| Abstrakt: |
Doped GaN:Si crystals were grown in a commercially available vertical HVPE reactor. The templates used for the HVPE heteroepitaxy were so-called FACELO seeds, with a starting GaN layer thickness of 3–4 μm. The FWHM of the 0002 and the reflection of the HVPE-grown GaN:Si crystals with a thickness of 3 mm are and , respectively, indicating excellent crystal quality. Hall measurements resulted in a charge carrier concentration of cm−3, while exhibiting a mobility of 250 cm−2V−1 s−1. These values coincide with the values extracted from FTIR measurements and the lineshape fitting of the A1(LO)/plasmon coupled phonon mode of the confocal Raman measurements. SIMS investigations yielded a silicon atom concentration of cm−3. This indicates an activation of the dopant atoms of approximately 90%. The TDD determined by CL dark spot counting was cm−2. Within the measurement accuracy, the confocal Raman measurements did not show a tensile strain generation due to the silicon doping with resulting charge carrier concentrations of cm−3. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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