| Autor: |
Halley, D., Norga, G., Guiller, A., Fompeyrine, J., Locquet, J. P., Drechsler, U., Siegwart, H., Rossel, C. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 11/15/2003, Vol. 94 Issue 10, p6607-6610, 4p, 3 Graphs |
| Abstrakt: |
The carrier mobility μ in low-doped silicon-on-insulator wafers is found to be strongly modified by the deposition of a thin ZrO[sub 2] or SrZrO[sub 3] top layer grown by molecular-beam epitaxy. Pseudo-metal–oxide–semiconductor field-effect-transistor measurements performed on several samples clearly show a correlation between μ and the density of interface traps (D[sub it]) at the Si/buried-oxide interface. The reduction of D[sub it] by a forming gas anneal leads to a corresponding increase in mobility. Moreover, the high-k/Si interface can contribute to the total drain current via the creation of an inversion channel induced by trapped charges in the high-k layer. Using Hall-effect measurements, we took advantage of this additional current to evaluate the carrier mobility at the high-k/Si interface, without the need of a top gate electrode. © 2003 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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