Experimental and theoretical study of fT for SiGe HBTs with a scaled vertical doping profile.
| Autor: | Korn, J., Rucker, H., Heinemann, B., Pawlak, A., Wedel, G., Schroter, M. |
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| Zdroj: | 2015 IEEE Bipolar/BiCMOS Circuits & Technology Meeting - BCTM; 2015, p117-120, 4p |
| Databáze: | Complementary Index |
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