0.18µm SiGe BiCMOS technology for fully-integrated front-end ICs capable of sub-300fs Ron × Coff switch performance.
| Autor: | Moen, Kurt A., Preisler, Edward, Hurwitz, Paul, Zheng, Jie, McArthur, Warren, Racanelli, Marco |
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| Zdroj: | 2015 IEEE Bipolar/BiCMOS Circuits & Technology Meeting - BCTM; 2015, p109-112, 4p |
| Databáze: | Complementary Index |
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