A 135–150 GHz frequency quadrupler with 0.5 dBm peak output power in 55 nm SiGe BiCMOS technology.
| Autor: | Bossuet, Alice, Quemerais, Thomas, Lepilliet, Sylvie, Fournier, Jean-Michel, Lauga-Larroze, Estelle, Gaquiere, Christophe, Gloria, Daniel |
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| Zdroj: | 2015 IEEE Bipolar/BiCMOS Circuits & Technology Meeting - BCTM; 2015, p186-189, 4p |
| Databáze: | Complementary Index |
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