| Autor: |
Gul, R., Roy, U. N., Egarievwe, S. U., Bolotnikov, A. E., Camarda, G. S., Cui, Y., Hossain, A., Yang, G., James, R. B. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2016, Vol. 119 Issue 2, p025702-1-025702-6, 6p |
| Abstrakt: |
In this research, we assessed the abundance of point defects and their influence on the resistivity, the electron mobility-lifetime (μτe) product, and the electron trapping time in CdTeSe crystals grown under different conditions using the traveling heater method. We used current-deep level transient spectroscopy to determine the traps' energy, their capture cross-section, and their concentration. Further, we used these data to determine the trapping and de-trapping times for the charge carriers. The data show that detectors with a lower concentration of In-dopant have a higher density of A-centers and Cd double vacancies (VCd--). The high concentrations of VCd-- and A-centers, along with the deep trap at 0.86 eV and low density of 1.1 eV energy traps, are the major cause of the detectors' low resistivity, and most probably, a major contributor to the low μτe product. Our results indicate that the energy levels of point defects in the bandgap, their concentrations, capture cross-sections, and their trapping and de-trapping times play an important role in the detector's performance, especially for devices that rely solely on electron transport. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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