| Autor: |
Yifeng Hu, Hua Zou, Jianhao Zhang, Jianzhong Xue, Yongxing Sui, Weihua Wu, Li Yuan, Xiaoqin Zhu, Sannian Song, Zhitang Song |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 12/28/2015, Vol. 107 Issue 26, p1-5, 5p, 4 Graphs |
| Abstrakt: |
In order to improve the operation speed of phase change memory (PCM), superlattice-like Ge2Sb2Te5/Sb (SLL GST/Sb) thin films were prepared in a sputtering method to explore the suitability as an active material for PCM application. Compared with GST, SLL GST/Sb thin film has a lower crystallization temperature, crystallizationactivation energy,thermal conductivity, and smaller crystalline grain size. A faster SET/RESET switching speed (10 ns) and a lower operation power consumption (the energy for RESET operation 9.1 × 10-13 J) are obtained. In addition, GST/Sb shows a good endurance of 8.3 × 104 cycles. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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