New Generation of Resistance Thermometers Based on Ge Films on GaAs Substrates.

Autor: Boltovets, N. S., Dugaev, V. K., Kholevchuk, V. V., McDonald, P. C., Mitin, V. F., Nemish, I. Yu., Pavese, F., Peroni, I., Sorokin, P. V., Soloviev, E. A., Venger, E. F.
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Zdroj: AIP Conference Proceedings; 2003, Vol. 684 Issue 1, p399-404, 6p
Abstrakt: Recent results in the development of resistance thermometers based on germanium films on gallium arsenide are summarized. Preliminary results in the development of a new generation of radiation-resistant thermometers and multifunction sensors intended for use in the range 0.03 to 500 K in the presence of high magnetic fields are discussed. These sensors have been produced in an international collaboration recently funded through the EU INTAS program. © 2003 American Institute of Physics [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index