| Autor: |
Keyes, B.M., Dippo, P., Metzger, W.K., Abushama, J., Noufi, R. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 11/1/2003, Vol. 94 Issue 9, p5584, 8p, 3 Charts, 10 Graphs |
| Abstrakt: |
The changes in dominant recombination mechanisms of Cu(In,Ga)Se[sub 2] thin films grown from (In,Ga)[sub 2]Se[sub 3] precursors are investigated using energy- and time-resolved photoluminescence. The results are analyzed with a rate-equation analysis and correlated with n/p diode measurements on processed devices. The experimental results quantify a change in the dominant radiative process and an improvement in the underlying material quality. These observations support a growth model incorporating changes in the dominant defect states and recombination mechanisms during this final stage of the growth process. Additionally, evidence is presented that supports the passivation of near-surface recombination sites by CdS. © 2003 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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