| Autor: |
Chen, C.Y., Chen, W.D., Song, S.F., Xu, Z.J., Liao, X.B., Li, G.H., Ding, K. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 11/1/2003, Vol. 94 Issue 9, p5599, 6p, 1 Black and White Photograph, 1 Chart, 5 Graphs |
| Abstrakt: |
The erbium-doped hydrogenated amorphous silicon suboxide films containing amorphous silicon clusters were prepared. The samples exhibited photoluminescence peaks at around 750 nm and 1.54 μm, which could be assigned to the electron-hole recombination in amorphous silicon clusters and the intra-4f transition in Er[sup 3+], respectively. Correlations between the intensities of these two photoluminescence peaks and oxidation and dehydrogenation of the films during annealing were studied. It was found that the oxidation is triggered by dehydrogenation of the films even at low annealing temperatures, which decisively changes the intensities of the two photoluminescence peaks. On the other hand, the increase of Er content in the erbium-doped hydrogenated amorphous silicon suboxide film will enhance Er[sup 3+] emission at 1.54 μm, while quench amorphous silicon cluster emission at 750 nm, such a competitive relationship, was also observed in the erbium-doped silicon nanocrystals embedded in SiO[sub 2] matrix. Moreover, we found that Er[sup 3+] emission is not sensitive to whether silicon clusters are crystalline or amorphous. The amorphous silicon clusters can be as sensitizer on Er[sup 3+] emission as that of silicon nanocrystals. © 2003 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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