| Autor: |
Gopal, Vishnu, Weida Hu |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2015, Vol. 118 Issue 22, p224503-1-224503-7, 7p, 2 Charts, 6 Graphs |
| Abstrakt: |
This paper presents an improved method to characterize the current–voltage (I-V) characteristics of a HgCdTe photodiode under low illumination. Such characteristics exhibit relatively small but finite zero-bias minority carrier current. The open circuit voltage of the diode is generally small and remains un-noticed due to inappropriate measurement conditions. These characteristics are often mistaken as the dark characteristics of the diode. It is shown here that these kinds of lowly illuminated characteristics may be characterized by using a recently proposed model to analyze the illuminated I-V characteristics that make use of experimentally observed photo-current due to illumination and the resulting open circuit voltage in modelling the current characteristics of the photodiode. An example of long-wavelength HgCdTe diode's I-V characteristics under low illumination that was previously analyzed as dark characteristics is discussed here to illustrate the improved method and to further emphasize the importance of taking into account the influence of illumination on the current characteristics while investigating the leakage currents in infrared photodiodes. Our results show that, by taking into account the effect of illumination, the agreement between the theory and experiment has significantly improved. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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