| Autor: |
Simon, Daniel K., HENke, Thomas, Jordan, Paul M., FENgler, Franz P. G., Mikolajick, Thomas, Bartha, Johann W., Dirnstorfer, Ingo |
| Předmět: |
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| Zdroj: |
Physica Status Solidi - Rapid Research Letters; Nov2015, Vol. 9 Issue 11, p631-635, 5p |
| Abstrakt: |
Flash light annealing is introduced to reduce the thermal budget of the post-deposition treatment of Al2O3 layers used for silicon surface passivation. Al2O3 films are grown by thermal and plasma-enhanced atomic layer deposition (ALD). The deposition parameters essentially determine the passivation performance after low-thermal budget annealing. Layers grown at low ALD temperatures of 150 °C reach higher lifetimes than Al2O3 films grown at 250 °C. Al2O3 layers grown by thermal ALD reached carrier lifetimes above 4 ms after flash light annealing (20 cycles) at 200 °C in H2 atmosphere. This value is achieved due to a very low interface trap density of below 1010 eV-1 cm-2 and a fixed charge density of (2-3) × 1012 cm-2. In contrast, plasma ALD-grown Al2O3 layers only reach carrier lifetimes of about 1 ms. This is mainly caused by a more than 10 times higher density of interface traps, and thus, inferior chemical passivation. The strong influence of the deposition parameters is explained by the limitation of hydrogen transport in Al2O3 during low-thermal budget annealing. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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