| Autor: |
Hossain, Tashfin, Wei, Daming, Edgar, James H., Garces, Nelson Y., Nepal, Neeraj, Hite, Jennifer K., Mastro, Michael A., Eddy Jr., Charles R., Meyer, Harry M. |
| Předmět: |
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| Zdroj: |
Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics; Nov/Dec2015, Vol. 33 Issue 6, p061201-1-061201-6, 6p |
| Abstrakt: |
The surface preparation for depositing Al2O3 for fabricating Au/Ni/Al2O3/n-GaN (0001) metal oxide semiconductor (MOS) capacitors was optimized as a step toward realization of high performance GaN MOSFETs. The GaN surface treatments studied included cleaning with piranha (H2O2:H2SO4=1:5), (NH4)2S, and 30% HF etches. By several metrics, the MOS capacitor with the piranha-etched GaN had the best characteristics. It had the lowest capacitance-voltage hysteresis, the smoothest Al2O3 surface as determined by atomic force microscopy (0.2nm surface roughness), the lowest carbon concentration (∼0.78%) at the Al2O3/n-GaN interface (from x-ray photoelectron spectroscopy), and the lowest oxide-trap charge (QT = 1.6×1011cm-2eV-1). Its interface trap density (Dit=3.7×1012cm-2eV-1), as measured with photon-assisted capacitance-voltage method, was the lowest from conduction band-edge to midgap. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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