MOCVD of gallium nitride nanostructures using (N3)2Ga{(CH2)3NR2}, R = Me, Et, as a single molecule precursor: morphology control and materials characterization.
Autor: | Jayaprakash Khanderi, Andreas Wohlfart, Harish Parala, Anjana Devi, Julia Hambrock, Alexander Birkner, Roland. A. Fischer |
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Zdroj: | Journal of Materials Chemistry; May2003, Vol. 13 Issue 6, p1438, 9p |
Databáze: | Complementary Index |
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