MOCVD of gallium nitride nanostructures using (N3)2Ga{(CH2)3NR2}, R = Me, Et, as a single molecule precursor: morphology control and materials characterization.

Autor: Jayaprakash Khanderi, Andreas Wohlfart, Harish Parala, Anjana Devi, Julia Hambrock, Alexander Birkner, Roland. A. Fischer
Zdroj: Journal of Materials Chemistry; May2003, Vol. 13 Issue 6, p1438, 9p
Databáze: Complementary Index