Impact of gate oxide complex band structure on n-channel III–V FinFETs.

Autor: Crum, Dax M., Valsaraj, Amithraj, Register, Leonard F., Banerjee, Sanjay K., Sahu, Bhagawan, Krivakopic, Zoran, Banna, Srinivasa, Nayak, Deepak
Zdroj: 2015 12th IEEE International Conference on Advanced Video & Signal Based Surveillance (AVSS); 2015, p250-253, 4p
Databáze: Complementary Index