| Autor: |
Tang Xiao-Yu, Lu Ji-Wu, Zhang Rui, Wu Wang-Ran, Liu Chang, Shi Yi, Huang Zi-Qian, Kong Yue-Chan, Zhao Yi |
| Předmět: |
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| Zdroj: |
Chinese Physics Letters; Nov2015, Vol. 32 Issue 11, p1-1, 1p |
| Abstrakt: |
Ultra-thin-body (UTB) Ino.53Gao.47As-on-insulator (Ino.53Gao.47As-OI) structures with thicknesses of 8 and 15nm are realized by transferring epitaxially grown Ino.53Gao.47As layers to silicon substrates with 15-nm-thick Al2O3 as a buried oxide by using the direct wafer bonding method. Back gate n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) are fabricated by using these Ino.53Gao.47As-OI structures with excellent electrical characteristics. Positive bias temperature instability (PBTI) and hot carrier injection (HCI) characterizations are performed for the Ino.53Gao.47As-OI nMOSFETs. It is confirmed that the Ino.53Gao.47As-OI nMOSFETs with a thinner body thickness suffer from more severe degradations under both PBTI and HCI stresses. Moreover, the different evolutions of the threshold voltage and the saturation current of the UTB Ino.53Gao.47As-OI nMOSFETs may be due to the slow border traps. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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