| Autor: |
Xiaobin Zhang, Bingzhen Chen, Xu Pan, Lei Wang, Difei Ma, Yang Zhang, Cuibai Yang, Zhiyong Wang |
| Předmět: |
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| Zdroj: |
Journal of Physics D: Applied Physics; 12/2/2015, Vol. 48 Issue 47, p1-1, 1p |
| Abstrakt: |
GaInNAs materials with narrow bandgaps of 1.10 eV have been grown on a Ge substrate by metalorganic chemical vapor deposition to fabricate GaInNAs/Ge (1.10/0.67 eV) double-junction solar cells. We have studied the photovoltaic characteristics and the external quantum efficiencies of the double-junction cells with various annealing conditions and different GaInNAs base layer thicknesses. The best external quantum efficiency is obtained from the double-junction cell with a 1170 nm thick GaInNAs base layer annealed at 675 °C for 30 min. Under AM1.5G illumination, the best double-junction cell has a short circuit current density (JSC) as 23.63 mA cm−2, which is dominated by the JSC of the GaInNAs subcell. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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