| Autor: |
Bin Hou, Xiao-Hua Ma, Wei-Wei Chen, Jie-Jie Zhu, Sheng-Lei Zhao, Yong-He Chen, Yong Xie, Jin-Cheng Zhang, Yue Hao |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 10/19/2015, Vol. 107 Issue 16, p1-5, 5p, 2 Charts, 6 Graphs |
| Abstrakt: |
The parameters of open-gate structures treated with different etching time were monitored during the gate recess process, and their impacts on the threshold voltage (Vth) of final fabricated AlGaN/ GaN high electron mobility transistors (HEMTs) based on open-gate structures were discussed in this paper. It is found that Vth can exceed 0V when channel resistance in the recessed region (Ron-open) increases over ~275 Ω mm, maximum current (IDmax) decreases below ~29 mA/mm, or recessed barrier thickness (tRB) is below ~7.5 nm. In addition, tRB obtained by atomic force microscopy measurements and C-V measurements are also compared. Finally, theoretical common criteria based on the experimental results of this work for tRB and Ron-open were established to evaluate the Vth of a regular normally-off AlGaN/GaN HEMTs. The results indicate that these parameters of open-gate structure can be utilized to achieve normally-off HEMTs with controllable Vth. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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