| Autor: |
Leonard, J. T., Cohen, D. A., Yonkee, B. P., Farrell, R. M., DenBaars, S. P., Speck, J. S., Nakamura, S. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2015, Vol. 118 Issue 14, p145304-1-145304-13, 13p, 2 Charts, 7 Graphs |
| Abstrakt: |
We carried out a series of simulations analyzing the dependence of mirror reflectance, threshold current density, and differential efficiency on the scattering loss caused by the roughness of tin-doped indium oxide (ITO) intracavity contacts for 405 nm flip-chip III-nitride vertical-cavity surface-emitting lasers (VCSELs). From these results, we determined that the ITO root-mean-square (RMS) roughness should be <1 nm to minimize scattering losses in VCSELs. Motivated by this requirement, we investigated the surface morphology and optoelectronic properties of electron-beam (e-beam) evaporated ITO films, as a function of substrate temperature and oxygen flow and pressure. The transparency and conductivity were seen to increase with increasing temperature. Decreasing the oxygen flow and pressure resulted in an increase in the transparency and resistivity. Neither the temperature, nor oxygen flow and pressure series on single-layer ITO films resulted in highly transparent and conductive films with <1 nm RMS roughness. To achieve <1 nm RMS roughness with good optoelectronic properties, a multi-layer ITO film was developed, utilizing a two-step temperature scheme. The optimized multi-layer ITO films had an RMS roughness of <1 nm, along with a high transparency (~90% at 405 nm) and low resistivity (~2 × 10–4 Ω-cm). This multi-layer ITO e-beam deposition technique is expected to prevent p-GaN plasma damage, typically observed in sputtered ITO films on p-GaN, while simultaneously reducing the threshold current density and increasing the differential efficiency of III-nitride VCSELs. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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