| Autor: |
Kamins, T.I., Medeiros-Ribeiro, G., Ohlberg, D.A.A., Williams, R. Stanley |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 9/15/2003, Vol. 94 Issue 6, p4215, 10p, 3 Black and White Photographs, 1 Chart, 6 Graphs |
| Abstrakt: |
Reports on the formation of distinctive, three-dimensional islands by germanium (Ge) caused by the strain energy from the lattice mismatch when Ge is deposited expitaxially on silicon. Changes in surface energies when phosphorus is added during chemical vapor deposition; Determination of the shape of the islands by the energies of the surface facets, facet edges and interfaces; Decrease in the Ge deposition rate by phosphine due to competitive adsorption. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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