| Autor: |
Miller, Scott M., Troian, Sandra M., Wagner, Sigurd |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 10/13/2003, Vol. 83 Issue 15, p3207, 3p, 3 Diagrams, 1 Chart, 1 Graph |
| Abstrakt: |
Conventional fabrication of amorphous silicon thin-film transistors (a-Si TFTs) requires patterning numerous photoresist layers, a subtractive process that is time consuming and expensive. This letter describes transistor fabrication by a photoresist-free approach in which polymer etch masks are letterpress printed from flexible polyimide stamps. Pattern registration is achieved through optical alignment since the printed masks are thin and optically transparent. This modified fabrication scheme produces transistor performance equivalent to conventionally fabricated a-Si TFTs. The ability to directly print etch masks onto nonhomogeneous substrates brings one step closer the realization of flexible, large-area, macroelectronic fabrication. © 2003 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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