| Autor: |
Kalish, R., Uzan-Saguy, C., Walker, R., Prawer, S. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 9/15/2003, Vol. 94 Issue 6, p3923, 8p, 1 Chart, 8 Graphs |
| Abstrakt: |
Reports on the implantation of single crystal type IIa diamonds with sulfur, phosphorus and argon ions under different implantation and annealing conditions. Use of Raman spectroscopy to investigate the implantation related residual defects; Complication of the interpretation of experiments by the presence of B contamination. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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