2T2M memristor-based memory cell for higher stability RRAM modules.
Autor: | Shaarawy, Noha, Ghoneima, Maged, Radwan, Ahmed G. |
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Zdroj: | 2015 IEEE International Symposium on Circuits & Systems (ISCAS); 2015, p1418-1421, 4p |
Databáze: | Complementary Index |
Externí odkaz: |