2T2M memristor-based memory cell for higher stability RRAM modules.

Autor: Shaarawy, Noha, Ghoneima, Maged, Radwan, Ahmed G.
Zdroj: 2015 IEEE International Symposium on Circuits & Systems (ISCAS); 2015, p1418-1421, 4p
Databáze: Complementary Index