In-mole-fraction of InGaAs insertion layers effects on the structural and optical properties of GaSb quantum dots grown on (100) GaAs substrate.
| Autor: | Khoklang, Kamonchanok, Thainoi, Supachok, Panyakeow, Somsak, Kiravittaya, Suwit, Ratanathammaphan, Somchai |
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| Zdroj: | 2015 12th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications & Information Technology (ECTI-CON); 2015, p1-4, 4p |
| Databáze: | Complementary Index |
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