| Autor: |
Heikman, Sten, Keller, Stacia, Green, Daniel S., DenBaars, Steven P., Mishra, Umesh K. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 10/15/2003, Vol. 94 Issue 8, p5321, 5p, 1 Diagram, 1 Chart, 2 Graphs |
| Abstrakt: |
A methodology for the design of modulation doped AlGaN/GaN multiple channel heterostructures is presented. Doping is utilized in conjunction with polarization effects to achieve high carrier mobility and high sheet carrier density in each channel, while maintaining a low energy barrier for majority carrier transfer between channels. Several eight-period Si-doped Al[sub 0.22]Ga[sub 0.78]N/GaN heterostructures were grown by metalorganic chemical vapor deposition, according to the methodology. Sheet electron densities around 7.7×10[sup 13] cm[sup -2], and room temperature electron mobilities as high as 1200 cm2/V s were measured. Applications for the structure include lateral current spreading layers in III-nitride visible light and UV emitters and detectors, and high conductance source and drain access regions in AlGaN/GaN high electron mobility transistors. © 2003 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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