| Autor: |
Lau, W.S., Leong, L.L., Han, Taejoon, Sandler, Nathan P. |
| Předmět: |
|
| Zdroj: |
Applied Physics Letters; 10/6/2003, Vol. 83 Issue 14, p2835, 3p, 2 Charts, 2 Graphs |
| Abstrakt: |
Defect state D (0.8 eV) was experimentally detected in Ta[sub 2]O[sub 5] capacitors with ultrathin (physical thickness <10 nm) Ta[sub 2]O[sub 5] films using zero-bias thermally stimulated current spectroscopy and correlated with leakage current. Defect state D can be more efficiently suppressed by using N[sub 2]O rapid thermal annealing (RTA) instead of using O[sub 2] RTA for postdeposition annealing and by using TiN instead of Al for top electrode. We believe that defect D is probably the first ionization level of the oxygen vacancy deep double donor. Other important defects are Si/O-vacancy complex single donors and C/O-vacancy complex single donors. © 2003 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
