| Autor: |
Ikuno, Takashi, Ogawa, Syunsuke, Suzuki, Noritomo, Ito, Tadashi, Sugimoto, Noriaki, Takeda, Yasuhiko, Motohiro, Tomoyoshi, Higuchi, Kazuo |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2015, Vol. 118 Issue 10, p105305-1-105305-5, 5p, 1 Black and White Photograph, 1 Diagram, 1 Chart, 3 Graphs |
| Abstrakt: |
SiO2/poly-Si/SiO2 double-barrier structures fabricated by radio-frequency magnetron sputtering are shown to exhibit negative differential resistance (NDR) that is attributed to resonant tunneling (RT) at low temperatures. An annealing process conducted after the multilayer deposition is found to effectively yield stable NDR. Five percent of all of the fabricated devices exhibit clear NDR below 50 K. Other devices with the same multilayered structure exhibit staircase-like current-voltage curves caused by the Coulomb blockade (CB) or by interplay between the RT and CB. The requisites of the poly-Si layer microstructures for the realization of stable RT are elucidated. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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